| PART |
Description |
Maker |
| KM44C256D KM44C256D-6 KM44C256D-7 KM44C256D-8 |
256k x 4Bit CMOS DRAM with Fast Page Mode
256 x 4 Bit CMOS Dynamic RAM with Fast Page Mode 256 × 4位CMOS动态随机存储器的快速页面模
|
Samsung Electronics
Samsung Semiconductor Co., Ltd.
|
| V53C104B V53C104BK70 V53C104BK70L V53C104BK80 V53C |
HIGH PERFORMANCE, LOW POWER 256K X 4 BIT FAST PAGE MODE CMOS DYNAMIC RAM
High Performance / Low Power 256k x 4 Bit / Fast Page Mode CMOS DRAM
|
MOSEL[Mosel Vitelic, Corp]
|
| V53C104Z-10L V53C104K-10 V53C104K-10L |
HIGH PERFORMANCE, LOW POWER 256K X 4 BIT FAST PAGE MODE CMOS DYNAMIC RAM 高性能，低功耗，256K × 4位快速页面模式的CMOS动态随机存储器
|
Mosel Vitelic, Corp.
|
| KM44C256A |
256k x 4Bit CMOS DRAM with Fast Page Mode
|
Samsung Electronics
|
| A418316V-35U A418316V-25 A418316V-25U A418316S-25 |
256K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE
256K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE
|
http://
AMIC Technology
|
| V53C104BP80 |
HIGH PERFORMANCE, LOW POWER 256K X 4 BIT FAST PAGE MODE CMOS DYNAMIC RAM
|
Mosel Vitelic, Corp
|
| V53C8256L |
High Peformance 3.3 Volt 256K x 8 Bit Fast Page Mode CMOS Dynamic RAM(高性能3.3V 256Kx8快速页面模式动态RAM)
|
Mosel Vitelic, Corp.
|
| MSM51V4265 MSM51V4265E MSM51V4265E-70TS-K |
256K X 16 EDO DRAM, 70 ns, PDSO40
DRAM / FAST PAGE MODE TYPE
262,144-Word 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO
|
LAPIS SEMICONDUCTOR CO LTD
OKI electronic componets
|
| K4F160412D K4F160411D-BL50 |
4M x 4Bit CMOS Dynamic RAM with Fast Page Mode 4米4位的CMOS动态随机存储器的快速页面模
4M X 4 FAST PAGE DRAM, 50 ns, PDSO24
|
Samsung Semiconductor Co., Ltd.
|
| MB814100D-60 MB814100D-70 |
CMOS 4 M ×1 BIT
Fast Page Mode DRAM(CMOS 4 M ×1位速页面存取模式动态RAM)
CMOS 4 M ?1 BIT Fast Page Mode DRAM(CMOS 4 M ?1浣??椤甸?瀛??妯″??ㄦ?RAM)
|
Fujitsu Limited
|
| LC32464M-80 LC32464P |
256K (65536 words X 4 bits) DRAM Fast Page Mode
|
Sanyo Electric Co.,Ltd.
Sanyo Semicon Device
|
